Infineon IRF9530NPBF
MOSFET, Power,P-Ch,VDSS -100V,RDS(ON) 0.2Ohm,ID -14A,TO-220AB,PD 79W,VGS +/-20V
Mfr. Part #: IRF9530NPBF / RS Stock #: 70017011
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Price
Qty.
Standard Price
1
$0.902
10
$0.858
50
$0.814
100
$0.77
Bulk pricing available
Product Specifications
Product Attribute
Attribute Value
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Alternate Mfr Part Number
5410828
Channel Type
P
Configuration
Single
Drain Current
-10 Amp
Drain to Source On Resistance
0.2 Ohms
Drain to Source Voltage
-100 V
Forward Transconductance
3.2 S
Forward Voltage, Diode
-1.6 V
Gate to Source Voltage
20 V
Input Capacitance
760 pF @ -25 V pF
Maximum Operating Temperature
175 °C
Minimum Operating Temperature
-55 °C
Mounting Type
Through Hole
Number of Elements per Chip
1
Number of Pins
3
Package Type
TO-220AB
Polarization
P-Channel
Power Dissipation
79 W
Product Header
Hexfet® Power MOSFET
Temperature Operating Range
-55 to +175 °C
Total Gate Charge
58 nC
Turn Off Delay Time
45 ns
Turn On Delay Time
15 ns
Typical Gate Charge @ Vgs
Maximum of 58 nC @ -10 V
Voltage, Breakdown, Drain to Source
-100 V
Overview
P-Channel Power MOSFET over 8A, Infineon
Infineon's range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
Infineon's range of diskrete HEXFET® power MOSFETs includes P-channel devices in surface mount and leaded packages and form factors that can address almost any board layout and thermal design challenge. Across the range benchmark on resistance drives down conduction losses, allowing designers to deliver optimum system efficiency.
